Plasma etching of oxides and other materials which are difficult to etch with conventional ICP etching
Salient features: Designed specifically for deep etching of silicon dioxide, SPTS’ APS also offers significant improvements compared to conventional RIE and ICP etching for other materials such as SiC, LiNbO3 and quartz. The APS has a unique ICP coil arrangement to maximize RF power coupling and give high etch rates. A heated chamber reduces MTBC and process stability and magnetic confinement increases plasma density above the wafer and hinders deposition inside the chamber. Reliable electrostatic clamping is available to clamp a wide range of materials including insulating substrates if they include a conducting layer. Optional endpoint detection systems are also available. The APS is available a range of wafer handling platforms from single wafer loadlock for R&D to production-proven 4-chamber cluster tools with fully automated cassette-to-cassette loading for high volume manufacturing applications.