Okmetic epitaxial wafers offer superior layer uniformity and surface quality, as well as ideal epi thickness. In anisotropic wet etching of silicon, Okmetic epitaxial layers can be used as etch stop in both electrochemical (N/P interface) and chemical (stress-free Ge co- doped P++) etch processes.

Special Advantages:

• Epitaxy on a double side polished substrate for electrochemical etch stop processes
• Heavily-doped epitaxial wafers, including stress-free Ge co-doped wafers for P++ etch stop processes