Xenon DiFluoride (XeF2) Silicon Etching
Vapor phase (Vapour phase) dry release with Xenon DiFluoride (XeF2)
As a dry process, Xenon DiFluoride etching eliminates stiction in a single process. The patented memsstar® sacrificial vapor release XeF2 (SVR-Xe) process is highly selective to a range of materials including aluminum, photoresist, silicon nitride and silicon dioxide. And, since it is isotropic, large undercuts of structures can be performed with no degradation in etch rate. The Xenon DiFluoride process is capable of etching a wide range of films including silicon (in all forms), molybdenum, germanium and tungsten.
The memsstar® Xenon DiFluoride etch offers industry-leading etch rates and our single wafer processing guarantees excellent repeatability and wide process windows to maximise performance and yield. A controlled vaporisation system is used to deliver precise amounts of etch gas into a single-wafer vacuum chamber, which has a full range of process controls. The advantages of the memsstar® process can be clearly evidenced in continuous flow mode using memsstar®’s CCFT technique. Unique process controls deliver tuneable etch rates, uniformity and selectivity, with endpoint capability and thermal control of the wafer during etch.