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SUSS SB8e substrate bonder Wafer bonding for thermocompression, anodic and fusion processes
Salient Features: Pieces and wafers up to 8”, temperatures up to 550°C, force up to 20 kN vacuum to 5E-5 mbar Specifications: Bonding accuracy 3µ, tempperature uniformity +/- 1%
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SUSS SB8e substrate bonder
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